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Silicon Photonic Devices with Ge Quantum Dots as Light SourcesSHIRAKI, Yasuhiro; KAWAGUCHI, Kenji; XIA, Jinsong et al.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 67750Q.1-67750Q.6, issn 0277-786X, isbn 978-0-8194-6935-9, 1VolConference Paper

Magneto-photoluminescence studies of AIInAs/AlGaAs self-assembled quantum dots with type-II band alignmentOHDAIRA, Keisuke; ONO, Kazuo; UCHIDA, Kazuhito et al.Journal of the Physical Society of Japan. 2004, Vol 73, Num 2, pp 480-484, issn 0031-9015, 5 p.Article

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Enhancement of light emission from Ge quantum dots by photonic crystal nanocavities at room-temperatureXUEJUN XU; USAMI, Noritaka; MARUIZUMI, Takuya et al.Journal of crystal growth. 2013, Vol 378, pp 636-639, issn 0022-0248, 4 p.Conference Paper

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Elastic scattering and depletion effects on current-voltage characteristics of gated resonant tunneling diodesLEE, C.Japanese journal of applied physics. 1995, Vol 34, Num 2B, pp 1236-1240, issn 0021-4922, 1Conference Paper

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Numerical prediction for 2 GHz RF amplifier of SOI power MOSFETOMURA, I; NAKAGAWA, A.Japanese journal of applied physics. 1995, Vol 34, Num 2B, pp 827-830, issn 0021-4922, 1Conference Paper

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Suppression of leakage current in n-channel polysilicon thin-film transistors using NH₃ annealingDEUK-SUNG CHOI; SUNG-HOI HUR; GI-YOUNG YANG et al.Japanese journal of applied physics. 1995, Vol 34, Num 2B, pp 882-885, issn 0021-4922, 1Conference Paper